1 trench gate design dual igbtmod? 200 ampere s / 600 volts cm200du-12f powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 outline drawing and circuit diagram 1 description: powerex igbtmod? modules are designed for use in switching applications. each module con - sists of two igbt transistors in a half-bridge con?guration with each transistor having a reverse-con - nected super-fast recovery free- wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simpli?ed system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control ups battery powered supplies ordering information: example: select the complete module number you desire from the table - i.e. cm200du-12f is a 600v (v ces ), 200 ampere dual igbtmod? power module. current rating v ces type amperes volts (x 50) cm 200 12 dimensions inches millimeters a 3.70 94.0 b 1.89 48.0 c 1.18 +0.04/-0.02 30.0 +1.0/-0.5 d 3.150.01 80.00.25 e 0.43 11.0 f 0.16 4.0 g 0.71 18.0 h 0.02 0.5 j 0.53 13.5 k 0.91 23.0 l 0.83 21.2 m 0.67 17.0 dimensions inches millimeters n 0.28 7.0 p m5 m5 q dia. 0.26 6.5 dia. r 0.02 4.0 s 0.30 7.5 t 0.63 16.0 u 0.10 2.5 v 1.0 25.0 w 0.94 24.0 x 0.51 13.0 y 0.47 12.0 z 0.47 12.0 q (2 pla ces) cm a b w c d r u u t v t k k p - nuts (3 typ) c2e1 e2 c1 x m n e f g f j y l s h (4 pla ces) e2 g2 g1 e1 t c measured point c2e1 rt c rt c e2 e1 g1 c1 e2 g2
2 cm200du-12f trench gate design dual igbtmod? 200 ampere s / 600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 absolute maximum ratings, t j = 25c unless otherwise speci?ed ratings symbol cm200du-12f units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25c) i c 200 amperes peak collector current i cm 400* amperes emitter current** (t c = 25c) i e 200 amperes peak emitter current** i em 400* amperes maximum collector dissipation (t c = 25c, t j 150c) p c 590 watts mounting torque, m5 main terminal C 31 in-lb mounting torque, m6 mounting C 40 in-lb weight C 310 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts static electrical characteristics, t j = 25c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 20 a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5 6 7 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c C 1.6 2.2 volts i c = 200a, v ge = 15v, t j = 125c C 1.6 C volts total gate charge q g v cc = 300v, i c = 200a, v ge = 15v C 1240 C nc emitter-collector voltage** v ec i e = 200a, v ge = 0v C C 2.6 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. ** represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). 2
3 cm200du-12f trench gate design dual igbtmod? 200 ampere s / 600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 dynamic electrical characteristics, t j = 25c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 54 nf output capacitance c oes v ce = 10v, v ge = 0v C C 3.6 nf reverse transfer capacitance c res C C 2 nf inductive turn-on delay time t d(on) v cc = 300v, i c = 200a, C C 120 ns load rise time t r v ge1 = v ge2 = 15v, C C 100 ns switch turn-off delay time t d(off) r g = 3.1 , C C 350 ns times fall time t f inductive load C C 250 ns diode reverse recovery time** t rr switching operation C C 150 ns diode reverse recovery charge** q rr i e = 200a C 3.8 C c thermal and mechanical characteristics, t j = 25c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, t c reference C 0.21 c/w point per outline drawing thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference C C 0.35 c/w point per outline drawing thermal resistance, junction to case r th(j-c) 'q per igbt 1/2 module, C 0.13 c/w t c reference point under chip contact thermal resistance r th(c-f) per module, thermal grease applied C 0.045 C c/w ** represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
4 cm200du-12f trench gate design dual igbtmod? 200 ampere s / 600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 16 12 8 4 0 600 1200 1800 v cc = 300v v cc = 200v i c = 200a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 2 10 1 10 2 10 3 10 1 10 0 t rr i rr 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) collector current, i c , (amperes) 10 3 10 0 10 1 10 3 10 2 10 2 10 1 10 0 t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 3.1 ? t j = 125 c inductive load t f switching time, (ns) half-bridge switching characteristics (typical) collector-emitter voltage, v ce , (volts) capacitance, c ie s , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ie s c oes 0 1.0 2.0 3.0 4.0 10 0 10 1 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 emitter current, i e , (amperes ) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat ) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 6 8 1 2 10 18 16 14 20 4 3 2 1 0 t j = 25 c i c = 80a i c = 400a i c = 200a collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 3 0 100 200 2 1 0 400 300 v ge = 15v t j = 25 c t j = 125 c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 1 2 3 4 0 t j = 25 o c 100 200 400 300 v ge = 20v 15 10 9.5 9 8.5 7.5 8 11 c re s t j = 25 c time, (s ) normalized transient thermal impedance, z th( j-c) transient thermal impedance characteristics (igbt & fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) per unit base r th( j-c ) = 0.21 c/w (igbt) r th( j-c ) = 0.35 c/w (fwdi) single pulse t c = 25 c v cc = 300v v ge = 15v r g = 3.1 ? t j = 25 c inductive load
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